IRF4905S mosfet equivalent, power mosfet.
O Advanced Process Technology O Ultra Low On-Resistance O 150°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax O Some Parameters Are Di.
G D
HEXFET® Power MOSFET
D
VDSS = -55V
RDS(on) = 20mΩ
ID = -42A
S
D
S D G
D2Pak IRF4905SPbF
S D G
TO-262 IRF49.
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of oth.
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